dfnwb1.00.6-02l dfnwb1.00.6-02l plastic-encapsulate diodes ESDU5V0A1 esd protection diode description the ESDU5V0A1 is designed to prot ect voltage sensitive components from esd. excellent clamping capability, low leakage,and fast response time provide best in class protection on des igns that are exposed to esd. features z low reverse stand ? off voltage: 5.0 v z low leakage current z response time is typically < 1 ns z esd rating of class 3 per human body model z iec 61000-4-2 level 4 esd protection z these are pb ? free devices application z computers and peripherals z communications systems z audio and video equipment z high speed data lines z parallel ports marking ae topview maximum ratings ( t a =25 unless otherwise noted) parameter symbol limit unit iec 61000-4-2 esd voltage (note 1) air model 15 contact model 15 jesd22-a114-b esd voltage (note 1) per human body mode 12 esd voltage (note 1) machine model v esd 0.4 kv peak pulse current (8/20s waveform) (note 2) i pp 7 a peak pulse power (8/20s waveform) (note 2) p pp 100 w total power dissipation on fr-5 board (note 3) p d 100 mw thermal resistance from junction to ambient r ja 1250 /w lead solder temperature ? maximum (10 second duration) t l 260 junction temperature t j 150 storage temperature range t stg -55 ~ +150 note: 1.device stressed with ten non-repetitive esd pulses. 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
2.non-repetitive current pulse 8/20 s exponential decay waveform according to iec61000-4-5. 3. fr ? 5 = 1.0 x 0.75 x 0.62 in. stresses exceeding maximum ratings may damage the device. ma ximum ratings are stress ratings only.functional operation above the recommended.operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. electrical parameter symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm i t test current v br breakdown voltage @ i t electrical characteristics (t a = 25 c unless otherwise noted ) v rwm (v) i r ( a) @ v rwm v br (v) (2) @ i t =1ma v c (v) @i pp (3) =1 a v c (v) @i pp (3) =3 a c (pf) @v r =0,f=1mhz device (1) device marking max max min max max max typ max ESDU5V0A1 ae 5 1 5.4 9.4 10 15 0.5 0.9 (1)other voltages available upon request. (2)v br is measured with a pulse test current i t at an ambient temperature of 25 c . (3) non-repetitive current pulse 8/20 s exponential decay waveform according to iec 61000-4-5. 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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